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You heard it right now it will be possible to create a single 4 GB memory module for the PC’s .Samsung the leader in semiconductor technology announced that it has developed the highly efficient Stacking technology using the ‘through silicon via’ (TSV) technology that will make possible to have smaller ,faster and efficient RAM solutions and will also consume less power.

The new technology boasts of providing next generation packaging solutions that will make it possible to make high density and smaller size memory modules.

It is somewhat similar to the IBM vertical stacking technology that we have reviewed two weeks before, because it also uses the same ‘through silicon via’ (TSV) technology.The new wafer-level-processed stacked package (WSP) will consist of four 512 Mb DDR2 ( double data rate,second generation) DRAM (dynamic random access memory) chips which will be combined to get 2 Gbs of high density memory then Using the TSV-processed 2Gb DRAMs, Samsung will be able to create a 4GB (gigabyte) DIMM (dual in-line memory module) based on
advanced WSP technology for the first time.

“The innovative TSV-based MCP (multi-chip package) stacking technology offers a next-generation packaging solution that will accommodate the ever-growing demand for smaller-sized, high-speed, high-density memory,” said Tae-Gyeong Chung, vice president, Interconnect Technology Development Team, Memory Division, Samsung Electronics. “In addition, the performance advancements achieved by our WSP technology can be utilized in many diverse combinations of semiconductor packaging, such as system-in-package solutions that combine logic with memory.”

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